Aet technologies

ALOX OXIDATION FURNACE

Designed for realizing the wet thermal oxidation of III-V compound semiconductors

Alox Specifications

• Up to 6” wafers : edge exclusion 5 mm

• Selective oxidation process

• Oxide aperture uniformity σ
• Tight flow control of moisturized gas : 0,6 to 30 g/h
• Vacuum atmosphere :
• Stabilized temperature 350°C to 600°C
• Full control / supervision of machine
• Programming of recipes
• Automatic monitoring software to stop mesa oxidation attargeted operture (optional)
• Run-to-run deviation σ

 

* For common results, depending on wafer